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APM4408
N-Channel Enhancement Mode MOSFET
Features
*
20V/21A, RDS(ON) = 3.5m(typ.) @ VGS = 10V RDS(ON) = 5m(typ.) @ VGS = 4.5V RDS(ON) = 8m(typ.) @ VGS = 2.5V
Pin Description
S S S G 1 2 3 4 8 7 6 5 D D D D
* * *
High Density Cell Design Reliable and Rugged SO-8 Package SO - 8
D
Applications
*
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
G
S
Ordering and Marking Information
APM 4408
H a n d lin g C o d e Tem p. R ange P ackage C ode
N-Channel MOSFET
P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 C H a n d lin g C o d e TU : Tube TR : Tape & Reel
APM 4408 K :
APM 4408 XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating 20 16 21 60 A V Unit
Maximum Drain Current - Continuous Maximum Drain Current - Pulsed
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002 1 www.anpec.com.tw
APM4408
Absolute Maximum Ratings Cont.
Symbol PD Parameter Maximum Power Dissipation TA=25C TA=100C TJ TSTG RJA Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient
(TA = 25C unless otherwise noted)
Rating 1.6 0.625 150 -55 to 150 80 W C C C/W Unit
Electrical Characteristics
Symbol Static BV DSS IDSS V GS(th) IGSS R DS(ON)
a a
(TA = 25C unless otherwise noted)
APM4408 Min. Typ. Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
V GS =0V , IDS=250A V DS =18V , V GS =0V V DS =V GS , IDS=250A V GS =16V , V DS =0V V GS =10V , I DS =21A V GS =4.5V , IDS =17A V GS =2.5V , IDS =10A
20 1 0.8 3.5 5 8 0.6 45 20 17 35 19 110 60 5300 1000 300 1.5 100 4.5 6 10 1.3 65
V A V nA
m V
V SD
ISD=2.9A , V GS =0V V DS =10V , IDS = 21A V GS =4.5V ,
Dynamic b Qg Total Gate Charge Q gs Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Notes
a b
Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
nC 50 28 170 75
V DD=10V , IDS =1A , V GEN =4.5V , R G =6 V GS =0V V DS =15V Frequency=1.0MHz
ns
pF
: Guaranteed by design, not subject to production testing : Pulse test ; pulse width 300s, duty cycle 2%
Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002
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APM4408
Typical Characteristics
Output Characteristics
50
VGS=4,5,6,7,8,9,10V
Transfer Characteristics
50
IDS-Drain Current (A)
IDS-Drain Current (A)
40
40
30
30
20
V GS=3V
20
TJ=25C TJ=-55C TJ=125C
10
10
0
0 0 1 2 3 4 5
0
1
2
3
4
5
6
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250A
On-Resistance vs. Drain Current
0.008
VGS(th)-Threshold Voltage (V) (Normalized)
1.25 1.00 0.75 0.50 0.25 0.00 -50
RDS(ON)-On-Resistance ()
0.007 0.006
VGS=4.5V
0.005 0.004 0.003 0.002 0.001
VGS=10V
-25
0
25
50
75
100 125 150
0.000 0
10
20
30
40
50
Tj-Junction Temperature (C)
IDS-Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002
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APM4408
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
0.020
IDS=21A
On-Resistaence vs. Junction Temperature
2.00
VGS=10V IDS=21A
RDS (ON)-On-Resistance ()
0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 0 1 2 3 4 5 6 7 8 9 10
RDS(ON)-On-Resistance () (Normalized)
0.018
1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50
-25
0
25
50
75
100 125 150
Gate Voltage (V)
Tj-Junction Temperature (C)
Gate Charge
10 8000
VDS=10V IDS=21A
Capacitance Characteristics
Frequency=1MHz
VGS-Gate-to-Source Voltage (V)
7000
C-Capacitance (pF)
8
6000 5000 4000 3000 2000
Ciss
6
4
2 1000 0 0 10 20 30 40 50 60 70 80 90 0 0 5
Coss Crss
10
15
20
QG-Total Gate Charge (nC)
VDS-Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002
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APM4408
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
50 100
Single Pulse Power
ISD-Source Current (A)
10
80
Power (W)
1.2 1.4 1.6
60
TJ=150C
TJ=25C
40
20
1 0.0
0.2
0.4
0.6
0.8
1.0
0 0.01
0.1
1
10
VSD-Source to Drain Voltage
Time (sec)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1
0.1
D=0.05 D=0.02 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted
0.01 1E-4
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002
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APM4408
Packaging Information
SOP-8 pin ( Reference JEDEC Registration MS-012)
E
H
e1 D
e2
A1
A
1 L
0.004max.
Dim A A1 D E H L e1 e2 1
Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013
0.015X45
Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8
Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002
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APM4408
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR
Reflow) JEDEC Standard J-STD-020A APRIL 1999 Reference
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002
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APM4408
R e lia b ilit y te s t p r o g r a m
Te s t ite m S O L D E R A B IL IT Y H O LT PCT TST ESD L a tc h -U p M e th o d M IL -S T D -8 8 3 D -2 0 0 3 M IL -S T D -8 8 3 D -1 0 0 5 .7 J E S D -2 2 - B , A 1 0 2 M IL -S T D -8 8 3 D -1 0 11 .9 M IL -S T D -8 8 3 D -3 0 1 5 .7 JESD 78 D e s c rip tio n 2 45 C , 5 S E C 1 0 0 0 H rs B ia s @ 1 2 5 C 1 6 8 H rs , 1 0 0 % R H , 1 2 1 C -6 5 C ~ 1 5 0 C , 2 0 0 C y c le s V H B M > 2 K V, V M M > 2 0 0 V 1 0 m s , I tr > 1 0 0 m A
Carrier Tape
Po E P1 P D
t
F W
Bo
Ao
Ko D1
T2
J C A B
T1
Application
A 330 1
B 62 +1.5 D
C 12.75+ 0.15 D1
J 2 0.5 Po
T1 12.4 0.2 P1 2.0 0.1
T2 2 0.2 Ao 6.4 0.1
W 12 0. 3 Bo 5.2 0. 1
P 8 0.1 Ko
E 1.750.1 t
SOP- 8
F 5.5 1
1.55 +0.1 1.55+ 0.25 4.0 0.1
2.1 0.1 0.30.013
Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002
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APM4408
Cover Tape Dimensions
Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.1 - Mar., 2002
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